![]() STB13005 High Voltage Fast-switching NPN Power Transistors STB12NK80ZT4 N-channel 800V 0.65 Ohm 10.5A TO-220/D2PAK/TO-247 Zener-protected Supermesh Power MOSFET STB12NK80Z-S N-channel 800V - 0.65 Ohm - 10.5A I2SPAK Zener-protected SUPERMESHMOSFET STB12NK80Z N-channel 800V 0.65 Ohm 10.5A TO-220/D2PAK/TO-247 Zener-protected Supermesh Power MOSFET STB120NH03L N-channel 30V - 0.005 Ohm - 60A D2PAK StripFET Iii Power MOSFET For DC-DC Conversion STB120NF10T4 N-channel 100V - 0.009 Ohm - 120A D2PAK/TO-220 StripFET ii Power MOSFET Some Part number from the same manufacture ST Microelectronics, Inc. ![]() (*)Pulsed: Pulse duration = 300 µs, duty cycle ()Pulse width limited by safe operating area. Symbol ISD ISDM VSD trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions 60 A VDD = 4.7, VGS 10 V (Resistive Load, Figure 3) Min. Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 60 A VDD = 4.7 VGS 10 V (Resistive Load, Figure VGS=10 V Min. Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS 60 A Min. Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS 60 A Min. Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 ♚, VGS = 0 VDS = Max Rating VDS = Max Rating = 125☌ VGS 20 V Min. Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max 62.5 300 ☌/W ☌ĮLECTRICAL CHARACTERISTICS (TCASE 25 ☌ UNLESS OTHERWISE SPECIFIED) OFF Pulse width limited by safe operating area. Symbol VDS VDGR VGS ID IDM() Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuous) = 25☌ Drain Current (continuous) = 100☌ Drain Current (pulsed) Total Dissipation = 25☌ Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value to 175 Unit W/☌ V/ns mJ ☌ SALES TYPE STB120NF10 STP120NF10 MARKING B120NF10 P120NF10 PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE It is also intended for any applications with low gate drive requirements. ![]() It is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. TYPICAL RDS(on) = 0.009 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
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